Event Details

Present InP bipolar transistors attain 1.1 THz fmax; InP field-effect transistors attain 1.5 THz. These can support emerging applications in 100-300 GHz wireless communications and imaging radar, 400-1000 Gb/s wireline and optical communications, and high-frequency instruments. After summarizing the applications and the required circuit and transistor performance, I will review transistor design, present transistor performance, and the design of next-generation THz bipolar and field-effect transistors.

March 28, 2025

Join Zoom Meeting
https://usc.zoom.us/j/97017422125?pwd=Dbrt8MNMrmBV3xalKQJcAiNsggFJjJ.1&from=addon
Meeting ID: 970 1742 2125
Passcode: 937624

Host: Steve Crago
POC: Amy Kasmir

Speaker Bio

Mark J. W. Rodwell (Fellow, IEEE) received the Ph.D. degree from Stanford University 1988. He holds the Doluca Family Endowed Chair in Electrical and Computer Engineering with the University of California at Santa Barbara. During 2017-2023, he directed the SRC/DARPA ComSenTer Wireless Research Center. His research group develops high-frequency transistors, ICs, and communication systems. Dr. Rodwell was a recipient of the 1997 IEEE Microwave Prize, the 1998 European Microwave Conference Microwave Prize, the 2009 IEEE IPRM Conference Award, the 2010 IEEE Sarnoff Award, the 2012 Marconi Prize Paper Award, and the 2022 SIA/SRC University Research Award. For 2024-2025, he is serving as an IEEE-MTT-S Distinguished Microwave Lecturer.